Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs
| Autor: | Bajaj, Sanyam, Shoron, Omor F., Park, Pil Sung, Krishnamoorthy, Sriram, Akyol, Fatih, Hung, Ting-Hsiang, Reza, Shahed, Chumbes, Eduardo M., Khurgin, Jacob, Rajan, Siddharth |
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| Rok vydání: | 2015 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.4933181 |
| Popis: | We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10^7 cm/s at a low sheet charge density of 7.8 x 10^11 cm-2. A new optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated LO phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs. Comment: 11 pages, 7 figures |
| Databáze: | arXiv |
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