Mottness at finite doping and charge-instabilities in cuprates
Autor: | Peli, Simone, Conte, Stefano Dal, Comin, Riccardo, Nembrini, Nicola, Ronchi, Andrea, Abrami, Paolo, Banfi, Francesco, Ferrini, Gabriele, Brida, Daniele, Lupi, Stefano, Fabrizio, Michele, Damascelli, Andrea, Capone, Massimo, Cerullo, Giulio, Giannetti, Claudio |
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Rok vydání: | 2015 |
Předmět: | |
Zdroj: | Nature Physics 13, 806-812 (2017) |
Druh dokumentu: | Working Paper |
DOI: | 10.1038/nphys4112 |
Popis: | The intrinsic instability of underdoped copper oxides towards inhomogeneous states is one of the central puzzles of the physics of correlated materials. The influence of the Mott physics on the doping-temperature phase diagram of copper oxides represents a major issue that is subject of intense theoretical and experimental effort. Here, we investigate the ultrafast electron dynamics in prototypical single-layer Bi-based cuprates at the energy scale of the O-2p$\rightarrow$Cu-3d charge-transfer (CT) process. We demonstrate a clear evolution of the CT excitations from incoherent and localized, as in a Mott insulator, to coherent and delocalized, as in a conventional metal. This reorganization of the high-energy degrees of freedom occurs at the critical doping p$_{cr}\simeq$0.16 irrespective of the temperature, and it can be well described by dynamical mean field theory calculations. We argue that the onset of the low-temperature charge instabilities is the low-energy manifestation of the underlying Mottness that characterizes the p
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Databáze: | arXiv |
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