| Autor: |
Han, Haoxue, Zhang, Yong, Mijbil, Zainelabideen Y., Sadeghi, Hatef, Ni, Yuxiang, Xiong, Shiyun, Saaskilahti, Kimmo, Bailey, Steven, Kosevich, Yuriy A., Liu, Johan, Lambert, Colin J., Volz, Sebastian |
| Rok vydání: |
2015 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1038/ncomms11281 |
| Popis: |
Self-heating is a severe problem for high-power microelectronic devices. Graphene and few-layer graphene have attracted tremendous attention for heat removal thanks to their extraordinarily high in-plane thermal conductivity. However, this high thermal conductivity undergoes severe degradations caused by the contact with the substrate and the functionalization-induced point defects. Here we show that thermal management of a micro heater can be substantially improved via introduction of alternative heat-escaping channels implemented with graphene-based film covalently bonded to functionalized graphene oxide through silane molecules. Theoretical and experimental results demonstrate a counter-intuitive enhancement of the thermal conductivity of such a graphene-based film. This increase in the in-plane thermal conductivity of supported graphene is accompanied by an improvement on the graphene-substrates thermal contact. Using infrared thermal imaging, we demonstrate that the temperature of the hotspots can be lowered by 12 $^o$C in transistors operating at 130 W mm$^{-2}$ , which corresponds to half of an order-of-magnitude increase in the device lifetime. Ab initio and molecular dynamics simulations reveal that the functionalization constrains the cross-plane scattering of low frequency phonons, which in turn enhances in-plane heat conduction of the bonded graphene film by recovering the long flexural phonon lifetime. |
| Databáze: |
arXiv |
| Externí odkaz: |
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