A comprehensive analysis of the (R13xR13)R13.9{\deg} type II structure of silicene on Ag(111)

Autor:	Jamgotchian, H., Ealet, B., Maradj, H., Hoarau, J. -Y., Biberian, J. -P., Aufray, B.
Rok vydání:	2015
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1088/0953-8984/28/19/195002
Popis:	In this paper, using the same geometrical approach than for the (2R3x2R3) R30{\deg} structure (H. Jamgotchian et al., 2015, Journal of Physics. Condensed Matter 27 395002), for the (R13xR13)R13.9{\deg} type II structure, we propose an atomic model of the silicene layer based on a periodic relaxation of the strain epitaxy. This relaxation creates periodic arrangements of perfect areas of (R13xR13)R13.9{\deg} type II structure surrounded by defect areas. A detailed analysis of the main published experimental results, obtained by Scanning Tunneling Microscopy and by Low Energy Electron Diffraction, shows a good agreement with the geometrical model. Comment: 20 pages, 9 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1507.08884 Zobrazit plný text záznamu View this record from Arxiv