Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds

Autor:	Nie, Yaozhuang, Rahman, Mavlanjan, Wang, Daowei, Wang, Can, Guo, Guanghua
Rok vydání:	2015
Předmět:	Condensed Matter - Materials Science
Zdroj:	Scientific Reports 5, 17980 (2015)
Druh dokumentu:	Working Paper
DOI:	10.1038/srep17980
Popis:	We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct gap semiconductor-topological insulator (TI) transitions with increasing strain from negative (compressive) to positive (tensile) values. The topological phase transition results from the band inversion at $\Gamma$ point due to lattice strain and is irrelevant to spin-orbit coupling (SOC). Comment: 16 pages, 6 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1507.06068 Zobrazit plný text záznamu View this record from Arxiv