Effect of structural relaxation on the electronic structure of graphene on hexagonal boron nitride

Autor:	Slotman, G. J., van Wijk, M. M., Zhao, Pei-Liang, Fasolino, A., Katsnelson, M. I., Yuan, Shengjun
Rok vydání:	2015
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science Physics - Computational Physics
Zdroj:	Phys. Rev. Lett. 115, 186801 (2015)
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevLett.115.186801
Popis:	We performed calculations of electronic, optical and transport properties of graphene on hBN with realistic moir\'e patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap. Comment: 5 pages, 6 figures. Supplementary material is available at http://www.theorphys.science.ru.nl/people/yuan/attachments/sm_hbn.pdf
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1507.03146 Zobrazit plný text záznamu View this record from Arxiv