| Autor: |
Liu, H. J., Jiao, L., Xie, L., Yang, F., Chen, J. L., Ho, W. K., Gao, C. L., Jia, J. F., Cui, X. D., Xie, M. H. |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2D Mater. 2 034004 (2015) |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1088/2053-1583/2/3/034004 |
| Popis: |
Interests in two-dimensional transition-metal dichalcogenides have prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy. However, growths of monolayer and bilayer WSe2, an important member of the transition-metal dichalcogenides family, by the molecular-beam epitaxy method remain uncharted probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a scanning tunneling microscopy and spectroscopy study of molecular-beam epitaxy-grown WSe2 monolayer and bilayer, showing atomically flat epifilm with no domain boundary defect. This contrasts epitaxial MoSe2 films grown by the same method, where a dense network of the domain boudaries defects is present. The scanning tunneling spectroscopy measurements of monolayer and bilayer WSe2 domains of the same sample reveal not only the bandgap narrowing upon increasing the film thickness from monolayer to bilayer, but also a band-bending effect across the boundary between monolayer and bilayer domains. This band-bending appears to be dictated by the edge states at steps of the bilayer islands. Finally, comparison is made between the scanning tunneling spectroscopy-measured electronic bandgaps with the exciton emission energies measured by photoluminescence, and the exciton binding energies in monolayer and bilayer WSe2/MoSe2 are thus estimated. |
| Databáze: |
arXiv |
| Externí odkaz: |
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