Surface and Step Conductivities on Si(111) Surfaces
| Autor: | Just, Sven, Blab, Marcus, Korte, Stefan, Cherepanov, Vasily, Soltner, Helmut, Voigtländer, Bert |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | Phys. Rev. Lett. 115, 066801 (2015) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevLett.115.066801 |
| Popis: | Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from non-surface contributions. A termination of the Si(111) surface with either Bi or H results in the two limiting cases of a pure 2D or 3D conductance, respectively. In order to further disentangle the surface conductivity of the step-free surface from the contribution due to atomic steps, a square four-probe configuration is applied as function of the rotation angle. In total this combined approach leads to an atomic step conductivity of $\sigma_\mathrm{step} = (29 \pm 9)$ $\mathrm{\Omega}^{-1} \mathrm{m}^{-1}$ and to a step-free surface conductivity of $\sigma_\mathrm{surf} = (9 \pm 2) \cdot 10^{-6}\,\mathrm{\Omega}^{-1}/\square$ for the Si(111)-(7$\times$7) surface. Comment: Main paper: 5 pages, 4 figures, Supplemental material: 6 pages, 3 figures. The Supplemental Material contains details on the sample preparation and measurement procedure, additional experimental results for Si(111) samples with different doping levels, and the description of the three-layer conductance model |
| Databáze: | arXiv |
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