Pressure enhanced superconductivity at 10 K in La doped EuBiS2F
| Autor: | Thakur, Gohil S., Jha, Rajveer, Haque, Zeba, Awana, V. P. S., Gupta, L. C., Ganguli, A. K. |
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| Rok vydání: | 2015 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1088/0953-2048/28/11/115010 |
| Popis: | Polycrystalline Eu0.5La0.5BiS2F was synthesized by solid state reaction which crystallizes in the tetragonal CeOBiS2 structure (P4/nmm). We report here enhancement of Tc to 2.2 K in Eu0.5La0.5BiS2F (by electron doping in EuBiS2F with Tc ~ 0.3 K). Eu0.5La0.5BiS2F is semiconducting down to 3 K and an onset of superconductivity is seen at 2.2 K at ambient pressure. Upon application of pressure the Tc could be enhanced upto 10 K. Step like features are seen in the resistivity curves at intermediate pressures (0.5 - 1 GPa) which hints towards the possible existence of two phases with different Tc. At a pressure above 1.38GPa, the Tconset remains invariant at 10 K but the Tc(\r{ho}=0) is increased to above 8.2 K. There is a possible transformation from a low Tc phase to a high Tc phase by application of pressure. Comment: Accepted in Supercond. Sci. Technol. (Sept 2015) |
| Databáze: | arXiv |
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