Tuning the electronic structures of silicene and germanene by biaxial strain and electric field
| Autor: | Yan, Jia-An, Gao, Shang-Peng, Stein, Ryan, Coard, Gregory |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | Physical Review B 91, 245403 (2015) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.91.245403 |
| Popis: | We present a first-principles study of effects of small biaxial strain ($|\varepsilon|\le 5\%$) and perpendicular electric field (E-field) on the electronic and phonon properties of low-buckled silicene and germanene. With an increase of the biaxial strain, the conduction bands at the high symmetric $\Gamma$ and $M$ points of the first Brillouin zone shift significantly towards the Fermi level in both silicene and germanene. In contrast, the E-field changes the band dispersions near the $\Gamma$ and open a small band gap at the K point in silicene. We found that the field-induced gap opening in silicene could be enhanced by a compressive strain while mitigated by a tensile strain. This result highlights the tunability of the electronic structures of silicene by combining the mechanical strain and the electric field. Comment: 8 pages, 7 figures |
| Databáze: | arXiv |
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