Development of nanowire devices with quantum functionalities
Autor: | Stuiber, Michael, van Beveren, Laurens Willems, Johnson, Brett, Weber, Walter, Heinzig, Andre, Beister, Jurgen, Jamieson, David, McCallum, Jeffrey |
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Rok vydání: | 2015 |
Předmět: | |
Druh dokumentu: | Working Paper |
DOI: | 10.1109/COMMAD.2014.7038655 |
Popis: | Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new generation of devices that operate under the laws of quantum mechanics [1}. Semiconductor nanowires however, offer huge potential as the next building blocks of nano-devices due to their one-dimensional structure and properties [2]. We describe a fabrication process to prepare doped vapor-liquid-solid (VLS) grown silicon nanowire samples in a 2- and 4-terminal measurement setup for electrical characterisation. Comment: 2 pages Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2014 Conference |
Databáze: | arXiv |
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