Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

Autor:	Pal, Atindra Nath, Mueller, Susanne, Ihn, Thomas, Ensslin, Klaus, Tschirky, Thomas, Charpentier, Christophe, Wegscheider, Werner
Rok vydání:	2015
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	AIP Advances 5, 077106 (2015)
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4926385
Popis:	We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states. Comment: 5 pages, 2 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1502.06697 Zobrazit plný text záznamu View this record from Arxiv