Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example
| Autor: | Barzola-Quiquia, J., Lehmann, T., Stiller, M., Spemann, D., Esquinazi, P., Häussler, P. |
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| Rok vydání: | 2015 |
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| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.4908007 |
| Popis: | We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing the samples transform into the rhombohedral Bi$_2$Se$_3$ crystalline strcuture which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance (MR) and the Hall effect (HE) at different temperatures between 2 K and 275 K. At temperatures $T \lesssim 50$ K and fields $B \lesssim 1$ T we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods. Comment: 8 pages, 9 figures, to be published in Journal of Applied Physics (2015) |
| Databáze: | arXiv |
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