| Autor: |
Krohn, M., Bentele, B., Cumalat, J. P., Wagner, S. R., Christian, D. C., Deptuch, G., Fahim, F., Hoff, J., Shenai, A. |
| Rok vydání: |
2015 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1088/1748-0221/10/12/P12007 |
| Popis: |
We report on the effects of ionizing radiation on 65nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature. |
| Databáze: |
arXiv |
| Externí odkaz: |
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