Charge transport in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$

Autor:	Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Cheng, C. H., Chin, A.
Rok vydání:	2015
Předmět:	Condensed Matter - Materials Science
Zdroj:	Appl. Phys. Lett. 106 (2015) 102906
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4914900
Popis:	In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf$_{0.5}$Zr$_{0.5}$O$_2$ is phonon-assisted tunneling between traps like in HfO$_2$ and ZrO$_2$. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf$_{0.5}$Zr$_{0.5}$O$_2$ were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf$_{0.5}$Zr$_{0.5}$O$_2$ was discussed. Comment: 4 pages, 3 figures, 1 table
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1501.02370 Zobrazit plný text záznamu View this record from Arxiv