Angle dependence of the orbital magnetoresistance in bismuth
Autor: | Collaudin, Aurelie, Fauque, Benoit, Fuseya, Yuki, Kang, Woun, Behnia, Kamran |
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Rok vydání: | 2015 |
Předmět: | |
Zdroj: | Phys. Rev. X 5, 021022 (2015) |
Druh dokumentu: | Working Paper |
DOI: | 10.1103/PhysRevX.5.021022 |
Popis: | We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semi-classic transport theory for a multi-valley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a $2\pi/3$ rotation of magnetic field around the trigonal axis modifies the amplitude of the magneto-resistance below a field-dependent temperature. By following the evolution of this anomaly as a function of temperature and magnetic field, we mapped the boundary in the (field, temperature) plane separating two electronic states. In the less-symmetric state, confined to low temperature and high magnetic field, the three Dirac valleys cease to be rotationally invariant. We discuss the possible origins of this spontaneous valley polarization, including a valley-nematic scenario. Comment: 15 pages, 14 figures |
Databáze: | arXiv |
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