Origins of GaN(0 0 0 1) surface reconstructions

Autor:	Vezian, S., Semond, F., Massies, J., Bullock, D. W., Ding, Z., Thibado, P. M.
Rok vydání:	2014
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science
Zdroj:	Surface Science 541, 242 (2003)
Druh dokumentu:	Working Paper
DOI:	10.1016/S0039-6028(03)00950-6
Popis:	The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Various reconstructions are observed with RHEED by analyzing patterns while the substrate is exposed to a fixed NH3 flux or after depositing known amounts of Ga as a function of substrate temperature. In situ STM images reveal that only a few of these reconstructions yield long-range periodicity in real space. The controversial role of arsenic on Ga induced reconstructions was also investigated using two independent MBE chambers and X-ray photoelectron spectroscopy. Comment: 14 pages, 7 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1501.00143 Zobrazit plný text záznamu View this record from Arxiv