Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures

Autor:	Frabboni, Stefano, Grillo, Vincenzo, Gazzadi, Gian Carlo, Balboni, Roberto, Trotta, Rinaldo, Polimeni, Antonio, Capizzi, Mario, Martelli, Faustino, Rubini, Silvia, Guzzinati, Giulio, Glas, Frank
Rok vydání:	2014
Předmět:	Condensed Matter - Materials Science
Zdroj:	Appl. Phys. Lett. 101, 111912 (2012)
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4752464
Popis:	Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed. Comment: 10 pages. 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1410.2436 Zobrazit plný text záznamu View this record from Arxiv