High-performance controllable ambipolar infrared phototransistors based on graphene-quantum dot hybrid

Autor:	Wang, Ran, Zhang, Yating, Wang, Haiyang, Song, Xiaoxian, Jin, Lufan, Dai, Haitao, Wu, Sen, Yao, Jianquan
Rok vydání:	2014
Předmět:	Physics - Instrumentation and Detectors Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
Popis:	The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode devices. In this paper, we presented and fabricated conveniently-controlled grapheme / PbS QD hybrid FETs. Through the investigation on electric and optoelectronic properties, the ambipolar FETs (normally OFF) can be switched ON by raising gate voltage (VG) up to 3.7 V and -0.8 V in the first and third quadrants. Near these thresholds (VT) each carrier species shows comparable mobility (~ 300 cm2V-1s-1). Photo-responsivity reach ~ 107 A/W near each threshold and it will linearly increases with (VG-VT). These hybrid FETs become strongly competitive candidates for devices in flexible integrated circuits with low cost, large area, low-energy consumption and high performances. Comment: 10 pages, 6 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1410.2413 Zobrazit plný text záznamu View this record from Arxiv