Polarized Temperature Dependent Raman Study of Bi2Te3-Cr2Ge2Te6 heterostructure and the Ferromagnetic Insulator Cr2Ge2Te6
Autor: | Tian, Yao, Ji, Huiwen, Alegria, R. J. Cava L. D., Petta, J. R., Burch, Kenneth S. |
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Rok vydání: | 2014 |
Předmět: | |
Druh dokumentu: | Working Paper |
Popis: | Cr2Ge2Te6 has been of interest for decades, as it is one of only a few ferromagnetic insulators. Recently, this material has been revisited due to its potential as a substrate for Bi2Te3, a topological insulator. This enables the possibility of studying the anomalous quantum Hall effect in topological insulators, and a route to novel spintronic devices. To probe the compatibility of these two materials, we use polarized variable temperature Raman microscopy to study Bi2Te3-Cr2Ge2Te6 heterostructure as well as the phonon dynamics of Cr2Ge2Te6. We found the temperature dependence of the Cr2Ge2Te6 phonons results primarily from anharmonicity, though a small magneto-elastic coupling is also observed. Our results confirm the potential of Cr2Ge2Te6 as a substrate for topological insulators. Comment: 4 pages, 5 figures |
Databáze: | arXiv |
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