High Resolution Parameter Space from a Two Level Model on Semi-Insulating GaAs
| Autor: | da Silva, S. L., Viana, E. R., de Oliveira, A. G., Ribeiro, G. M., da Silva, R. L. |
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| Rok vydání: | 2014 |
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| Druh dokumentu: | Working Paper |
| DOI: | 10.1142/S0218127415300049 |
| Popis: | Semi-insulating Gallium Arsenide (SI-GaAs) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs, namely, "the model", proposed by E. Scholl was not capable to generate the NNDC curve for SI-GaAs, in this work we proposed an alternative model. The model proposed, "the two-valley model" is based on the minimal set of generation recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The "two valley model" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the periodicity (PSP) using a Periodicity-Detection (PD) routine. In the parameter space were observed self-organized periodic structures immersed in chaotic regions. The complex regions are presented in a "shrimp" shape rotated around a focal point, which forms in large-scale a "snail shell" shape, with intricate connections between different "shrimps". The knowledge of detailed information on parameter spaces is crucial to localize wide regions of smooth and continuous chaos. Comment: 16 pages, 8 figures, Accepted for publication on International Journal of Bifurcation and Chaos (2015) |
| Databáze: | arXiv |
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