Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
| Autor: | Charikova, T., Okulov, V., Gubkin, A., Lugovikh, A., Moiseev, K., Nevedomsky, V., Kudriavstev, Yu., Gallardo, S., Lopez, M. |
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| Rok vydání: | 2014 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.4906539 |
| Popis: | The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found. Comment: 8 pages, 3 figures |
| Databáze: | arXiv |
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