Two-dimensional Quasi-Freestanding Molecular Crystals for High-Performance Organic Field-Effect Transistors
| Autor: | He, Daowei, Zhang, Yuhan, Wu, Qisheng, Xu, Rui, Nan, Haiyan, Liu, Junfang, Yao, Jianjun, Wang, Zilu, Yuan, Shijun, Li, Yun, Shi, Yi, Wang, Jinlan, Ni, Zhenhua, He, Lin, Miao, Feng, Song, Fengqi, Xu, Hangxun, Watanabe, K., Taniguchi, T., Xu, Jian-Bin, Wang, Xinran |
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| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Nature Communications 5, 5162 (2014) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1038/ncomms6162 |
| Popis: | Two-dimensional atomic crystals are extensively studied in recent years due to their exciting physics and device applications. However, a molecular counterpart, with scalable processability and competitive device performance, is still challenging. Here, we demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy, with precisely controlled thickness down to monolayer, large-area single crystal, low process temperature and patterning capability. The crystalline layers are atomically smooth and effectively decoupled from the substrate due to weak van der Waals interactions, affording a pristine interface for high-performance organic transistors. As a result, monolayer dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to 10cm2V-1s-1 and aggressively scaled saturation voltage around 1V. Our work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications. Comment: 68 pages, 4 figures |
| Databáze: | arXiv |
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