Heterojunction Hybrid Devices from Vapor Phase Grown MoS$_{2}$
| Autor: | Yim, Chanyoung, O`Brien, Maria, McEvoy, Niall, Riazimehr, Sarah, Schäfer-Eberwein, Heiko, Bablich, Andreas, Pawar, Ravinder, Iannaccone, Giuseppe, Downing, Clive, Fiori, Gianluca, Lemme, Max C., Duesberg, Georg S. |
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| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Scientific Reports 4 (2014) 5458 |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1038/srep05458 |
| Popis: | We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS$_{2}$ layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS$_{2}$. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering. Comment: 23 pages with 4 figures. This article has been published in Scientific Reports. (26 June 2014, doi:10.1038/srep05458) |
| Databáze: | arXiv |
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