| Autor: |
Delahaye, Julien, Grenet, Thierry, Marrache-Kikuchi, C., Bergé, L., Drillien, A. A. |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
Europhysics Letters 106 (2014) 67006 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1209/0295-5075/106/67006 |
| Popis: |
We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature dependent dynamics. |
| Databáze: |
arXiv |
| Externí odkaz: |
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