Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate
| Autor: | Lee, Hee Sung, Baik, Seung Su, Min, Sung-Wook, Jeon, Pyo Jin, Kim, Jin Sung, Choi, Kyujin, Ryu, Sunmin, Choi, Hyoung Joon, Kim, Jae Hoon, Im, Seongil |
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| Rok vydání: | 2014 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor field effect transistors (MISFETs), where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) with NiOx Schottky electrode, where the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by on-state gate field. Our MESFETs with single-, double-, and triple-layered MoS2 respectively demonstrate high mobilities of 6000, 3500, and 2800 cm2/Vs at a certain low threshold voltage of -1 ~ -2 V. The thickness-dependent mobility difference in MESFETs was theoretically explained with electron scattering reduction mechanisms. Comment: 27 pages, 3 figures, Supplementary Materials |
| Databáze: | arXiv |
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