Compressive strain-induced metal-insulator transition in orthorhombic SrIrO3 thin films
Autor: | Gruenewald, J. H., Nichols, J., Terzic, J., Cao, G., Brill, J. W., Seo, S. S. A. |
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Rok vydání: | 2014 |
Předmět: | |
Zdroj: | J. Mater. Res. 29, 2491 (2014) |
Druh dokumentu: | Working Paper |
DOI: | 10.1557/jmr.2014.288 |
Popis: | We have investigated the electronic properties of epitaxial orthorhombic SrIrO3 thin-films under compressive strain. The metastable, orthorhombic SrIrO3 thin-films are synthesized on various substrates using an epi-stabilization technique. We have observed that as in-plane lattice compression is increased, the dc-resistivity (\r{ho}) of the thin films increases by a few orders of magnitude, and the d\r{ho}/dT changes from positive to negative values. However, optical absorption spectra show Drude-like, metallic responses without an optical gap opening for all compressively-strained thin films. Transport measurements under magnetic fields show negative magneto-resistance at low temperature for compressively-strained thin-films. Our results suggest that weak localization is responsible for the strain-induced metal-insulator transition for the orthorhombic SrIrO3 thin-films. Comment: 5 figurs |
Databáze: | arXiv |
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