Compressive strain-induced metal-insulator transition in orthorhombic SrIrO3 thin films

Autor:	Gruenewald, J. H., Nichols, J., Terzic, J., Cao, G., Brill, J. W., Seo, S. S. A.
Rok vydání:	2014
Předmět:	Condensed Matter - Strongly Correlated Electrons Condensed Matter - Materials Science
Zdroj:	J. Mater. Res. 29, 2491 (2014)
Druh dokumentu:	Working Paper
DOI:	10.1557/jmr.2014.288
Popis:	We have investigated the electronic properties of epitaxial orthorhombic SrIrO3 thin-films under compressive strain. The metastable, orthorhombic SrIrO3 thin-films are synthesized on various substrates using an epi-stabilization technique. We have observed that as in-plane lattice compression is increased, the dc-resistivity (\r{ho}) of the thin films increases by a few orders of magnitude, and the d\r{ho}/dT changes from positive to negative values. However, optical absorption spectra show Drude-like, metallic responses without an optical gap opening for all compressively-strained thin films. Transport measurements under magnetic fields show negative magneto-resistance at low temperature for compressively-strained thin-films. Our results suggest that weak localization is responsible for the strain-induced metal-insulator transition for the orthorhombic SrIrO3 thin-films. Comment: 5 figurs
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1406.6640 Zobrazit plný text záznamu View this record from Arxiv