| Autor: |
Singh, S. D., Ajimsha, R. S., Mukherjee, C., Kumar, Ravi, Kukreja, L. M., Ganguli, Tapas |
| Rok vydání: |
2014 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| Popis: |
Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi scans in high resolution X-ray diffraction measurements are (0001) ZnO || (111) GaP and (-1 2 -1 0) ZnO || (-1 1 0) GaP respectively. Our results of epitaxy of ZnO and its intense excitonic photoluminescence with very weak defect luminescence suggest that (111) oriented GaP can be a potential buffer layer choice for the integration of ZnO based optoelectronic devices on Si(111) substrates. |
| Databáze: |
arXiv |
| Externí odkaz: |
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