Effects of nitrogen-doping configurations with vacancies on conductivity in graphene
| Autor: | Radchenko, T. M., Tatarenko, V. A., Sagalianov, I. Yu., Prylutskyy, Yu. I. |
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| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Physics Letters A, vol. 378, pp. 2270-2274 (2014) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1016/j.physleta.2014.05.022 |
| Popis: | We investigate electronic transport in the nitrogen-doped graphene containing different configurations of point defects: singly or doubly substituting N atoms and nitrogen-vacancy complexes. The results are numerically obtained using the quantum-mechanical Kubo-Greenwood formalism. Nitrogen substitutions in graphene lattice are modelled by the scattering potential adopted from the independent self-consistent ab initio calculations. Variety of quantitative and qualitative changes in the conductivity behaviour are revealed for both graphite- and pyridine-type N defects in graphene. For the most common graphite-like configurations in the N-doped graphene, we also consider cases of correlation and ordering of substitutional N atoms. The conductivity is found to be enhanced up to several times for correlated N dopants and tens times for ordered ones as compared to the cases of their random distributions. The presence of vacancies in the complex defects as well as ordering of N dopants suppresses the electron-hole asymmetry of the conductivity in graphene. Comment: Physics Letters A (2014) |
| Databáze: | arXiv |
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