Direct bandgap silicon quantum dots achieved via electronegative capping

Autor:	Poddubny, A. N., Dohnalová, K.
Rok vydání:	2014
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1103/PhysRevB.90.245439
Popis:	We propose a novel concept of achieving silicon quantum dots with radiative rates enhanced by more than two orders of magnitude up to the values characteristic for direct band gap semiconductors. Our tight-binding simulations show how the surface engineering can dramatically change the density of confined electrons in real- and $k$-space and give rise to the new conduction band levels in $\Gamma$-valley, thus promoting the direct radiative transitions. The effect may be realized by covering the silicon dots with covalently bonded electronegative ligands, such as alkyl or teflon chains and/or by embedding in highly electronegative medium. Comment: 5 pages, 3 figures+ Supplementary Materials
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1405.6259 Zobrazit plný text záznamu View this record from Arxiv