| Autor: |
Bruna, M., Ott, A. K., Ijas, M., Yoon, D., Sassi, U., Ferrari, A. C. |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
ACS Nano 8, 7432 (2014) |
| Druh dokumentu: |
Working Paper |
| Popis: |
We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by \textit{in-situ} Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level |
| Databáze: |
arXiv |
| Externí odkaz: |
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