Origin of band gaps in graphene on hexagonal boron nitride
| Autor: | Jung, Jeil, DaSilva, Ashley, MacDonald, Allan H., Adam, Shaffique |
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| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Nature Communications 6:6308 (2015) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1038/ncomms7308 |
| Popis: | Recent progress in preparing well controlled 2D van der Waals heterojunctions has opened up a new frontier in materials physics. In this paper we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed on a hexagonal boron nitride substrate, demonstrating that they are produced by an interesting interplay between structural and electronic properties, including electronic many-body exchange interactions. Our theory is able to explain the observed gap behavior by accounting first for the structural relaxation of graphene's carbon atoms when placed on a boron nitride substrate and then for the influence of the substrate on low-energy $\pi$-electrons located at relaxed carbon atom sites. The methods we employ can be applied to many other van der Waals heterojunctions. Comment: 16 pages 15 figures. This version corrects minor numerical errors |
| Databáze: | arXiv |
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