The emergence of topologically protected surface states in epitaxial Bi(111) thin films
| Autor: | Zhu, Kai, Wu, Lin, Gong, Xinxin, Xiao, Shunhao, Li, Shiyan, Jin, Xiaofeng, Yao, Mengyu, Qian, Dong, Wu, Meng, Feng, Ji, Niu, Qian, de Juan, Fernando, Lee, Dung-Hai |
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| Rok vydání: | 2014 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| Popis: | Quantum transport measurements including the Altshuler-Aronov-Spivak (AAS) and Aharonov-Bohm (AB) effects, universal conductance fluctuations (UCF), and weak anti-localization (WAL) have been carried out on epitaxial Bi thin films ($10-70$ bilayers) on Si(111). The results show that while the film interior is insulating all six surfaces of the Bi thin films are robustly metallic. We propose that these properties are the manifestation of a novel phenomenon, namely, a topologically trivial bulk system can become topologically non-trivial when it is made into a thin film. We stress that what's observed here is entirely different from the predicted 2D topological insulating state in a single bilayer Bi where only the four side surfaces should possess topologically protected gapless states. Comment: 5 pages, 5figures |
| Databáze: | arXiv |
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