Electric field effect in ultrathin black phosphorus
| Autor: | Koenig, Steven P., Doganov, Rostislav A., Schmidt, Hennrik, Neto, A. H. Castro, Oezyilmaz, Barbaros |
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| Rok vydání: | 2014 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.4868132 |
| Popis: | Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm$^2$/Vs and drain current modulation of over 10$^3$. At low temperatures the on-off ratio exceeds 10$^5$ and the device exhibits both electron and hole conduction. Using atomic force microscopy we observe significant surface roughening of thin black phosphorus crystals over the course of 1 hour after exfoliation. Comment: Accepted to Applied Physics Letters, 12 pages, 3 figures |
| Databáze: | arXiv |
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