Electronic Properties of MoS2/HfO2 Interface: Impact of Interfacial Impurities during Atomic Layer Deposition Growth

Autor:	KC, Santosh, Longo, Roberto C., Wallace, Robert M., Cho, Kyeongjae
Rok vydání:	2014
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
Popis:	Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2 interface electronic structure is examined in order to mimic the atomic layer deposition growth at ambient conditions. Then, the effect on band offsets and the thermodynamic stability of those interfaces is investigated and compared with available relevant experimental data. These results seem to indicate that, for a well-prepared interface, the electronic device performance should be better than other interfaces like III-V/high-k due to the absence of interface defect states. However, any unpassivated defects, if present during oxide growth, strongly influence the subsequent electronic properties of the interface. Comment: This paper has been withdrawn due to highly confidential information
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1402.0457 Zobrazit plný text záznamu View this record from Arxiv