Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

Autor:	Fu, W., Abbassi, M. El, Hasler, T., Jung, M., Steinacher, M., Calame, M., Schönenberger, C., Puebla-Hellmann, G., Hellmüller, S., Ihn, T., Wallraff, A.
Rok vydání:	2014
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4857616
Popis:	We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependent gating in solution with nanosecond time resolution. Comment: 14 pages, 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1401.0381 Zobrazit plný text záznamu View this record from Arxiv