All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits
| Autor: | Renteria, J., Samnakay, R., Jiang, C., Pope, T. R., Goli, P., Yan, Z., Wickramaratne, D., Salguero, T. T., Khitun, A. G., Lake, R. K., Balandin, A. A. |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | J. Appl. Phys., 115, 034305 (2014) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1063/1.4862336 |
| Popis: | We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used in principle for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials. Comment: 22 pages; 8 figures |
| Databáze: | arXiv |
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