Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction

Autor:	Cubukcu, Murat, Boulle, Olivier, Drouard, Marc, Garello, Kevin, Avci, Can Onur, Miron, Ioan Mihai, Langer, Juergen, Ocker, Berthold, Gambardella, Pietro, Gaudin, Gilles
Rok vydání:	2013
Předmět:	Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4863407
Popis:	We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line. The magnetization of the bottom FeCoB layer can be switched reproducibly by the injection of current pulses with density $5\times10^{11}$ A/m$^2$ in the Ta layer in the presence of an in-plane bias magnetic field, leading to the full-scale change of the TMR signal. Our work demonstrates the proof of concept of a perpendicular spin-orbit torque magnetic memory cell. Comment: 17 pages, 5 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1310.8235 Zobrazit plný text záznamu View this record from Arxiv