The influence of defects on the conductivity of graphene within the effective theory approach

Autor:	Valgushev, S. N., Luschevskaya, E. V., Pavlovsky, O. V., Polikarpov, M. I., Ulybyshev, M. V.
Rok vydání:	2013
Předmět:	Condensed Matter - Strongly Correlated Electrons
Druh dokumentu:	Working Paper
DOI:	10.1134/S0021364013200150
Popis:	The results of the simulations by Monte Carlo method of graphene with structural defects are presented. The calculations are performed within an effective quantum field theory with non-compact $3\hm + 1$--dimensional Abelian gauge field and $2\hm + 1$--dimensional Kogut-Susskind fermions. It was found that defects shift the phase transition point semimetal-insulator towards higher values of a substrate permittivity. Comment: 4 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1308.2094 Zobrazit plný text záznamu View this record from Arxiv