| Autor: |
Zhou, You, Chen, Xiaonan, Ko, Changhyun, Yang, Zheng, Mouli, Chandra, Ramanathan, Shriram |
| Rok vydání: |
2013 |
| Předmět: |
|
| Zdroj: |
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 2, FEBRUARY 2013 |
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1109/LED.2012.2229457 |
| Popis: |
Electrically driven metal-insulator transition in vanadium dioxide (VO2) is of interest in emerging memory devices, neural computation, and high speed electronics. We report on the fabrication of out-of-plane VO2 metal-insulator-metal (MIM) structures and reproducible high-speed switching measurements in these two-terminal devices. We have observed a clear correlation between electrically-driven ON/OFF current ratio and thermally-induced resistance change during metal-insulator transition. It is also found that sharp metal-insulator transition could be triggered by external voltage pulses within 2 ns at room temperature and the achieved ON/OFF ratio is greater than two orders of magnitude with good endurance. |
| Databáze: |
arXiv |
| Externí odkaz: |
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