Electric Field Effect Thermoelectric Transport in Individual Silicon and Germanium/Silicon Nanowire

Autor:	Brovman, Yuri M., Small, Joshua P., Hu, Yongjie, Fang, Ying, Lieber, Charles M., Kim, Philip
Rok vydání:	2013
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Druh dokumentu:	Working Paper
Popis:	We have simultaneously measured conductance and thermoelectric power (TEP) of individual silicon and germanium/silicon core/shell nanowires in the field effect transistor device configuration. As the applied gate voltage changes, the TEP shows distinctly different behaviors while the electrical conductance exhibits the turn-off, subthreshold, and saturation regimes respectively. At room temperature, peak TEP value of $\sim 300 \mu$V/K is observed in the subthreshold regime of the Si devices. The temperature dependence of the saturated TEP values are used to estimate the carrier doping of Si nanowires. Comment: 4 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1307.0249 Zobrazit plný text záznamu View this record from Arxiv