Autor:	Semyonov, Oleg, Subashiev, Arsen, Chen, Zhichao, Luryi, Serge
Rok vydání:	2013
Předmět:	Condensed Matter - Materials Science
Druh dokumentu:	Working Paper
DOI:	10.1016/j.jlumin.2013.11.002
Popis:	The shape of the photoluminescence line excited at an edge face of InP wafer and recorded from the broadside is used to investigate the intrinsic emission spectrum. The procedure is much less sensitive to the surface properties and the carrier kinetics than the conventional methods used with the reflection or transmission geometry of photoluminescence. Our method provides a tool for studying the effects of non-equilibrium distribution of minority carriers in doped direct-band semiconductors. Comment: 6 pages, 4 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1306.2928 Zobrazit plný text záznamu View this record from Arxiv