Electron Transport Through Ag-Silicene-Ag Junctions
| Autor: | Wang, Yun-Peng, Fry, J. N., Cheng, Hai-Ping |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | Phys. Rev. B 88, 125428 (2013) |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1103/PhysRevB.88.125428 |
| Popis: | For several years the electronic structure properties of the novel two-dimensional system silicene have been studied extensively. Electron transport across metal-silicence junctions, however, remains relatively unexplored. To address this issue, we developed and implemented a theoretical framework that utilizes the tight-binding Fisher-Lee relation to span non-equilibrium Green's function (NEGF) techniques, the scattering method, and semiclassical Boltzmann transport theory. Within this hybrid quantum-classical, two-scale framework, we calculated transmission and reflection coefficients of monolayer and bilayer Ag-silicene-Ag junctions using the NEGF method in conjunction with density functional theory; derived and calculated the group velocities; and computed resistance using the semi-classical Boltzmann equation. We found that resistances of these junctions are $\sim${}$ 0.08 \fom$ for monolayer silicene junctions and $\sim${}$ 0.3 \fom$ for bilayer ones, factors of $\sim$8 and $\sim$2, respectively, smaller than Sharvin resistances estimated via the Landauer formalism. Comment: 5 pages, 4 figures |
| Databáze: | arXiv |
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