Photoluminescence in Ga/Bi co-doped silica glass
| Autor: | Razdobreev, Igor, Hamzaoui, Hicham El, Arion, Vladimir B., Bouazaoui, Mohamed |
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| Rok vydání: | 2013 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1364/OE.22.005659 |
| Popis: | Bismuth-Gallium co-doped silica glass fiber preform was prepared from nano-porous silica xerogels using a conventional solution doping technique with a heterotrinuclear complex and subsequent sintering. Ga-connected optical Bismuth active center (BAC) was identified as the analogue of Al-connected BAC. Visible and infrared photoluminescence (PL) were investigated in a wide temperature range of 1.46-300 K. Based on the results of the continuous wave (CW) and time resolved spectroscopy we identify the centers emitting in the spectral region of 480-820 nm as Bi$^+$ ions. The near infrared (NIR) PL around 1100 nm consists of two bands. While the first one can be ascribed to the transition in Bi$^+$ ion, the second band is presumably associated to defects. We put in evidence the energy transfer between Bi$^+$ ions and the second NIR emitting center via quadrupole-quadrupole and dipole-quadrupole mechanisms of interactions. Finally, we propose the energy level diagram of Bi$^+$ ion interacting with this defect. Comment: 15 pages, 12 figures, submitted to Optics Express |
| Databáze: | arXiv |
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