| Autor: |
Jariwala, Deep, Sangwan, Vinod K., Late, Dattatray J., Johns, James E., Dravid, Vinayak P., Marks, Tobin J., Lauhon, Lincoln J., Hersam, Mark C. |
| Rok vydání: |
2013 |
| Předmět: |
|
| Druh dokumentu: |
Working Paper |
| DOI: |
10.1063/1.4803920 |
| Popis: |
Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature. |
| Databáze: |
arXiv |
| Externí odkaz: |
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