| Autor: |
Alexander-Webber, J. A., Baker, A. M. R., Janssen, T. J. B. M., Tzalenchuk, A., Lara-Avila, S., Kubatkin, S., Yakimova, R., Piot, B. A., Maude, D. K., Nicholas, R. J. |
| Rok vydání: |
2013 |
| Předmět: |
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| Druh dokumentu: |
Working Paper |
| DOI: |
10.1103/PhysRevLett.111.096601 |
| Popis: |
We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($\rho_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $\nu=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density. |
| Databáze: |
arXiv |
| Externí odkaz: |
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