Doping Mechanisms in Graphene-MoS2 Hybrids

Autor:	Sachs, B., Britnell, L., Wehling, T. O., Eckmann, A., Jalil, R., Belle, B. D., Lichtenstein, A. I., Katsnelson, M. I., Novoselov, K. S.
Rok vydání:	2013
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Appl. Phys. Lett. 103, 251607 (2013)
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4852615
Popis:	We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample. Comment: 11 pages, 7 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1304.2236 Zobrazit plný text záznamu View this record from Arxiv