Characterization of intra device mutual thermal coupling in multi finger SiGe:C HBTs

Autor:	Weiß, Mario, Sahoo, Amit Kumar, Raya, Cristian, Santorelli, Marco, Fregonese, Sébastien, Maneux, Cristell, Zimmer, Thomas
Rok vydání:	2013
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics Physics - Instrumentation and Detectors
Druh dokumentu:	Working Paper
Popis:	This paper studies the mutual coupling in trench isolated multi emitter bipolar transistors fabricated in a Si/SiGe:C HBT technology STMicroelectronics featuring fT and fmax of ~300GHz and ~400GHz, respectively. Thermal coupling parameters are extracted using three dimensional (3D) thermal TCAD simulations. The obtained parameters are implemented in a distributed transistor model that considers self-heating as well as thermal coupling between emitter fingers. Very good agreement is achieved between circuit simulations and DC measurements carried out on an in house designed test structure. Comment: Preprint, submitted to EDSSC 2013
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1304.1781 Zobrazit plný text záznamu View this record from Arxiv