Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots

Autor:	Takeda, K., Obata, T., Fukuoka, Y., Akhtar, W. M., Kamioka, J., Kodera, T., Oda, S., Tarucha, S.
Rok vydání:	2013
Předmět:	Condensed Matter - Mesoscale and Nanoscale Physics
Zdroj:	Appl. Phys. Lett. 102, 123113 (2013)
Druh dokumentu:	Working Paper
DOI:	10.1063/1.4799287
Popis:	We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero. Comment: 4 pages, 3 figures
Databáze:	arXiv
Externí odkaz:	http://arxiv.org/abs/1304.0064 Zobrazit plný text záznamu View this record from Arxiv