Molecular Memory with Atomically-Smooth Graphene Contacts
| Autor: | Umair, Ahmad, Raza, Tehseen Z., Raza, Hassan |
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| Rok vydání: | 2013 |
| Předmět: | |
| Druh dokumentu: | Working Paper |
| DOI: | 10.1186/1556-276X-8-476 |
| Popis: | We report the use of bilayer graphene as an atomically-smooth contact for nanoscale devices. A two-terminal Bucky ball (C60) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically-smooth covering over an otherwise rough metal surface. The use of graphene additionally prohibits the electromigration of nickel atoms into the C60 layer. The devices exhibit a low-resistance state in the first sweep cycle and irreversibly switch to a high resistance state at 0.8-1.2 V bias. The reverse sweep has a hysteresis behavior as well. In the subsequent cycles, the devices retain the high-resistance state, thus making it write-once read-many memory (WORM). The ratio of current in low-resistance to high-resistance state is lying in 20-40 range for various devices with excellent retention characteristics. Control sample without the bilayer graphene shows random hysteresis and switching. Comment: 13 pages and 4 figures |
| Databáze: | arXiv |
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